EPROM: Perbezaan antara semakan

Kandungan dihapus Kandungan ditambah
Yosri (bincang | sumb.)
Yosri (bincang | sumb.)
Tiada ringkasan suntingan
Baris 10:
Bagi mencapai data dari EPROM, alamat mewakili nilai pada pin alamat bagi EPROM dinyahkod dan digunakan bagi menyambung satu perkataan (biasanya 8-bit byte) simpanan pada penguat penimbal keluaran. Setiap bit perkataan adalah 1 atau 0, bergantung kepada simpanan transistor dihidupkan atau dimatikan, pengalir atau bukan pengalir.
 
Keadaan suis transistor kesan medan dikawal oleh voltan pada pintu kawalan transistor. Kehadiran voltan pada pintu ini mencipta laluan konduktif pada transistor, menghidupkannya. Malah, caj tersimpan pada pinu terapung membenarkan voltan ambang pada transistor diprogramkan.
<!----
The switching state of the field-effect transistor is controlled by the voltage on the control gate of the transistor. Presence of a voltage on this gate creates a conductive channel in the transistor, switching it on. In effect, the stored charge on the floating gate allows the threshold voltage of the transistor to be programmed.
 
StoringMenyimpan data inpada theingatan memorymemerlukan requiresmemilih selectingalamat ayang givendiberi addressdan andmemberikan applyingvltan alebih highertinggi voltagekepda to the transistorstransistor. Ini This creates an avalanchemencipta dischargelimpahan ofnyahcaj electronselektron, whichyang havememiliki enoughcukup energytenaga tobagi passmelepasi throughlapisan theoksida insulating oxide layer andpenebat accumulatedan onberkumpul thepada gateelektrod electrodepintu. WhenApabila thevoltan hightinggi voltage is removeddialih, the electrons are trappedelektron onterperangkap thepada electrodeelektrod. <ref>Vojin G. Oklobdzija, ''Digital Design and Fabrication'', CRC Press, 2008 ISBN 0849386020, page 5-14 through 5-17 </ref> BecauseDisebabkan ofnilai thepenebatan hightinggi insulationpada valueoksida ofsilikon themengelilingi silicon oxide surrounding the gatepintu, thecaj storedtersimpan chargetidak cannotmudah readilybocor leakkeluar away and thedan data canboleh bedisimpan retainedselama for decadesberkurun.
 
<!----
Unlike [[EEPROM]]s, the programming process is not electrically reversible. To erase the data stored in the array of transistors, ultraviolet light is directed onto the [[Die_(integrated_circuit)|die]]. Photons of the UV light cause ionization within the silicon oxide, which allow the stored charge on the floating gate to dissipate. Since the whole memory array is exposed, all the memory is erased at the same time. The process takes several minutes for UV lamps of convenient sizes; sunlight would erase a chip in weeks, and indoor [[fluorescent lamp|fluorescent lighting]] over several years. <ref> John E. Ayers ,''Digital integrated circuits: analysis and design'', CRC Press, 2004 , ISBN 084931951X, page 591 </ref> Generally the EPROMs must be removed from equipment to be erased, since it's not usually practical to build in a UV lamp to erase parts in-circuit.